IRF9Z24L power mosfet the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v -12 i d @ t c = 100c continuous drain current, v gs @ -10v -8.5 a i dm pulsed drain current ? -48 p d @t c = 25c power dissipation 45 w linear derating factor 0.30 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 96 mj i ar avalanche current ? -7.2 a e ar repetitive avalanche energy ? 4.5 mj dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 3.3 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = -55v r ds(on) = 0.175 w i d = -12a t o-220ab l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l p-channel l fully avalanche rated description s d g 2014-8-9 1 www.kesemi.com
parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.6 v t j = 25c, i s = -7.2a, v gs = 0v ? t rr reverse recovery time CCC 47 71 ns t j = 25c, i f = -7.2a q rr reverse recoverycharge CCC 84 130 c di/dt = -100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -55 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.05 CCC v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.175 w v gs = -10v, i d = -7.2a ? v gs(th) gate threshold voltage -2.0 CCC -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 2.5 CCC CCC s v ds = -25v , i d = -7.2a CCC CCC -25 a v ds = -55v , v gs = 0v C CC CCC -250 v ds = -44v , v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 19 i d = -7.2a q gs gate-to-source charge CCC CCC 5.1 nc v ds = -44v q gd gate-to-drain ("miller") charge CCC CCC 10 v gs = -10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 13 CCC v dd = -28v t r rise time CCC 55 CCC i d = -7.2a t d(off) turn-off delay time CCC 23 CCC r g = 24 w t f fall time CCC 37 CCC r d = 3.7 w, see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 350 CCC v gs = 0v c oss output capacitance CCC 170 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 92 CCC ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC i gss ns 4.5 7.5 i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd -7.2a, di/dt -280a/s, v dd v (br)dss , t j 175c notes: ? starting t j = 25c, l = 3.7mh r g = 25 w , i as = -7.2a. (see figure 12) ? pulse width 300s; duty cycle 2%. s d g source-drain ratings and characteristics a s d g -12 -48 IRF9Z24L 2014-8-9 2 www.kesemi.com
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics, fig 1. typical output characteristics, fig 3. typical transfer characteristics 1 10 100 0.1 1 1 0 100 d ds 20 s pulse width t = 25c a - i , drain-to-s ource current (a) - v , drain-to-source voltage (v) vg s top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bo tt om - 4. 5v -4 . 5v c 1 10 100 0.1 1 1 0 100 d ds a - i , drain-to-source current (a) - v , drain-to-source voltage (v) vg s top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bo tt om - 4. 5v -4 . 5v 2 0s pulse width t = 175c c 1 10 100 456789 1 0 t = 25c j gs d a - i , dra in-to-so urc e c urre nt (a ) - v , ga te-to-so urce voltage (v) v = -2 5 v 20s pulse w idth ds t = 175c j 0.0 0.5 1.0 1.5 2.0 - 6 0 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain -to -s ource o n re sistan ce d s (on) ( n orm alized) a v = -10 v gs i = -12 a d j j IRF9Z24L 2014-8-9 3 www.kesemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 0 5 10 15 20 25 g gs a - v , gate-to-s ource v oltage (v ) q , to tal gate charge (nc) f o r test circuit see figure 13 i = -7.2 a v = -4 4v v = -2 8v d ds ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t = 25c t = 150c j j v = 0 v gs sd sd a -i , r everse d rain current (a) - v , source-to-drain voltage (v) 1 10 100 1 10 100 o per ation in this area limited by r ds ( on) 10m s a - i , drain c urre nt (a) -v , drain-to-source voltage (v) ds d 10s 100 s 1m s t = 2 5c t = 1 75c single pulse c j 0 100 200 300 400 500 600 700 1 10 100 c , capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v , f = 1mh z c = c + c , c shorted c = c c = c + c gs i s s gs gd ds rss gd oss ds gd c is s c os s c rs s IRF9Z24L 2014-8-9 4 www.kesemi.com
fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d( off) t f 0 3 6 9 12 25 50 75 100 125 150 175 c t , c ase temperature (c) a - i , d rain current (am ps) d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , rectangular pulse duration (sec) 1 th jc d = 0.50 0. 01 0. 02 0. 05 0. 10 0. 20 s in g le p u l s e (thermal response) a t hermal r esponse (z ) p t 2 1 t dm n otes: 1. d uty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c IRF9Z24L 2014-8-9 5 www.kesemi.com
fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -10v d.u.t . v ds i d i g -3 ma v gs .3 m f 50k w .2 m f 12v cur rent regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0. 01 w t p d. u.t l v ds v dd dri ver a 15v - 20v 0 50 100 150 200 250 25 50 75 100 125 150 175 j e , s ingle pulse avalanche e nergy (m j) as a s tarting t , junction temperature (c) i to p -2.9a -5.1 a b otto m -7.2 a d IRF9Z24L 2014-8-9 6 www.kesemi.com
IRF9Z24L peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t . i sd w aveform d.u.t . v ds w aveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t * circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for p-channel hexfets 2014-8-9 7 www.kesemi.com
l ead assignments 1 - g a te 2 - d r ain 3 - source 4 - d r ain - b - 1.32 (.052) 1.22 (.048) 3x 0.5 5 (.02 2) 0.4 6 (.01 8) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0. 93 (.037) 0.69 (.027) 4.0 6 (.16 0) 3.5 5 (.14 0) 1.15 (.0 4 5) m in 6.4 7 (.25 5) 6.1 0 (.24 0) 3.78 (.14 9) 3.54 (.13 9) - a - 1 0.5 4 (.41 5) 1 0.2 9 (.40 5) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0 .3 6 (.01 4) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l er an c in g p er a n s i y 14 .5 m , 1 98 2. 3 o u tl in e c o n fo r m s to je d e c ou t lin e to -2 20 a b. 2 contr olling d imension : inch 4 heatsin k & lead m easurements d o not include bu rrs. par t number international rectifier lo go e xample : this is an irf1010 w ith assembly lo t co de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a part marking information to-220ab package outline to-220ab outline dimensions are shown in millimeters (inches) part number international rectifier lo go example : this is an irf1010 w ith assembly lo t co de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a IRF9Z24L 2014-8-9 8 www.kesemi.com
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